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ECE 553 Semiconductor Power Devices

·¡°ä·¡Ìý553ÌýÌýSemiconductor Power DevicesÌýÌý(3 credit hours)ÌýÌý

The operational physics and design concepts for power semiconductor devices. Relevant transport properties of semiconductors. Design of breakdown voltage and edge terminations. Analysis of Schottky rectifiers, P-i-N rectifiers, Power MOSFETs, Bipolar Transistors, Thyristors and Insulated Gate Bipolar Transistors.

Prerequisite: ·¡°ä·¡Ìý404

Typically offered in Fall only