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ECE 557 Principles Of MOS Transistors
·¡°ä·¡Ìý557ÌýÌýPrinciples Of MOS TransistorsÌýÌý(3 credit hours)ÌýÌý
MOS capacitor and transistor regions of operation. Depletion and enhancement mode MOSFETs. MOSFET scaling, short and narrow channel effects. MOSFETs with ion-implanted channels. High field effects in MOSFETs with emphasis on recent advances in design of hit carrier suppressed structures. Small and large signal MOSFET models. State of the art in MOS process integration.
Prerequisite: ·¡°ä·¡Ìý404
Typically offered in Fall only
Electrical Engineering (BS): Electronic Devices Concentrations
...442, ECE 418, ECE 489/589, ECE 530, ECE 538, ECE 553, and ECE 557...