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ECE 735 Wide Band Gap Semiconductor Power Devices
贰颁贰听735听听Wide Band Gap Semiconductor Power Devices听听(3 credit hours)听听
This course provides students with an in-depth knowledge of power devices built from wide bandgap semiconductors: the design of high breakdown voltages, the physics of unique power rectifier structures suitable for SiC material, the operating principles for unique SiC power MOSFETs, and GaN HEMT devices, the development of bipolar power devices from SiC to achieve ultra-high voltage performance and the performance of wide bandgap semiconductor power devices as compared to advanced silicon devices.
Prerequisite: 贰颁贰听553 or equivalent
Typically offered in Spring only