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MSE 770 Defects, Diffusion and Ion Implantation In Semiconductors
惭厂贰听770听听Defects, Diffusion and Ion Implantation In Semiconductors听听(3 credit hours)听听
Thermodynamics of vacancies and interstitials, defect complexes, electronic defects, defect annealing processes, self diffusion, dopant and impurity diffusion, substitutional/interstitial diffusion, diffusion in amorphous solids, electro transport, fundamentals of ion-solid interactions, semiconductor doping atomic structure of defects, damage annealing processes, supersaturated alloys, laser annealing, ion beam mixing phenomena, ion implantation and rapid thermal annealing processes, shallow junctions and devices.
Prerequisite: MAT 701
Typically offered in Spring only
This course is offered alternate years